1. 不同硫压退火对溅射沉积ZnS薄膜性能的影响. 物理学报, 2023, 72(3):034207(通讯作者) 2. 硫化时间对两步硫化法制备ZnS薄膜性能的影响. Betway必威手机版学报, 2022, 45(2): 93-98(通讯作者) 3. Investigation on structural and optical properties of ZnSe thin films prepared by selenization. Superlattices and Microstructures, 2021, 156:106965(通讯作者) 4. Effect of film thickness on structural and optical properties of ZnS: Cu films prepared by vulcanization. Superlattices and Microstructures, 2020, 146:106671(通讯作者) 5. 不同温度硫化生长ZnS薄膜的性能. 电子元件与材料, 2020, 39(3): 33-38(通讯作者) 6. Zn沉积时间对低温硫化制备ZnS薄膜性能的影响. 电子元件与材料, 2020, 39(5):43-48(通讯作者) 7. 低温硫化制备ZnS薄膜的物理性质研究. 原子核物理评论, 2020, 37(3):804-808(通讯作者) 8. Influence of low-temperature sulfidation on the structure of ZnS thin films. Chinese Physics B, 2019, 28(2):024214(通讯作者) 9. Effect of low temperature vulcanization time on the structure and optical properties of ZnS thin films. Applied Surface Science, 2019, 498:143876(通讯作者) 10. 硫化温度对ZnS薄膜生长质量的影响. 原子核物理评论, 2017, 34(3):651-655(通讯作者) 11. 硫化反应生长ZnS薄膜的结构和光学性能研究. Betway必威手机版学报, 2016, 39(5):343-347(通讯作者) 12. 退火对硫化方法制备ZnS薄膜特性的影响. 人工晶体学报, 2013, 42(6):1154-1158(第一作者) 13. 硫化法制备ZnS薄膜的结构和光学性能研究. 电子元件与材料, 2013, 32(5):23-25(第一作者) 14. Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn. Vacuum, 2012, 86:1210-1214(第一作者) 15. ZnO薄膜在硫蒸气中热硫化后结构和光学特性. 人工晶体学报, 2012, 41(6):1700-1704(第一作者) 16. Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO. Materials Chemistry and Physics, 2008, 112:557-561(第一作者) 17. Sulfidation growth and characterization of nanocrystalline ZnS thin films. Vacuum, 2008, 82: 1208-1211(第一作者) |